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| irf644npbf irf644ns IRF644NL hexfet ? power mosfet www.irf.com 1 v dss = 250v r ds(on) = 240m ? i d = 14a s d g pd - 94859 absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 14 i d @ t c = 100c continuous drain current, v gs @ 10v 9.9 a i dm pulsed drain current 56 p d @t c = 25c power dissipation 150 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 180 mj i ar avalanche current 8.4 a e ar repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt 7.9 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) d 2 pak irf644ns to-220ab irf644npbf to-262 IRF644NL description advanced process technology dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated ease of paralleling simple drive requirements lead-free (only the to-220ab version is currently available in a lead-free configuration) fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application.
irf644npbf/644nspbf/644nlpbf 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 14a, v gs = 0v t rr reverse recovery time ??? 165 250 ns t j = 25c, i f = 14a q rr reverse recovery charge ??? 1.0 1.6 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 14 56 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 250 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.33 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 240 m ? v gs = 10v, i d = 8.4a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 8.8 ??? ??? s v ds = 50v, i d = 8.4a ??? ??? 25 a v ds = 250v, v gs = 0v ??? ??? 250 v ds = 200v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 54 i d = 8.4a q gs gate-to-source charge ??? ??? 9.2 nc v ds = 200v q gd gate-to-drain ("miller") charge ??? ??? 26 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 10 ??? v dd = 125v t r rise time ??? 21 ??? i d = 8.4a t d(off) turn-off delay time ??? 30 ??? r g = 6.2 ? t f fall time ??? 17 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1060 ??? v gs = 0v c oss output capacitance ??? 140 ??? v ds = 25v c rss reverse transfer capacitance ??? 38 ??? pf ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.0 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount)** ??? 40 www.irf.com 3 irf644npbf/644nspbf/644nlpbf fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 4 6 8 10 11 13 15 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 175 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 14a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v irf644npbf/644nspbf/644nlpbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.1 1 10 100 0.0 0.4 0.8 1.1 1.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 0 12 24 36 48 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 8.4a v = 50v ds v = 125v ds v = 200v ds 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd www.irf.com 5 irf644npbf/644nspbf/644nlpbf fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds 90% 10% v gs t d(on) t r t d(off) t f 1 0.1 % + - 25 50 75 100 125 150 175 0 3 6 9 12 15 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) irf644npbf/644nspbf/644nlpbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - t p v (br)dss i as ! " #$ r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 60 120 180 240 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.4a 5.9a 8.4a www.irf.com 7 irf644npbf/644nspbf/644nlpbf p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? % ! " ! ? "#$ ? % & ? "#" ' ( ! )* % & ) )& !+ &' %%% ,- )"( " for n-channel hexfet ? power mosfets irf644npbf/644nspbf/644nlpbf 8 www.irf.com lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: t his is an ir f1010 lot code 1789 as s embled on ww 19, 1997 in the assembly line "c" int ernat ional rectifier logo lot code part number dat e code note: "p" in assembly line position indicates "lead-free" www.irf.com 9 irf644npbf/644nspbf/644nlpbf f530s this is an irf530s wit h lot code 8024 as s e mb le d on ww 02, 2000 in t he ass embly line "l" assembly lot code int ernat ional rectifier logo part number dat e code ye ar 0 = 2000 we e k 02 line l dimensions are shown in millimeters (inches) irf644npbf/644nspbf/644nlpbf 10 www.irf.com to-262 package outline dimensions are shown in millimeters (inches) to-262 part marking information e x a m p l e : t h i s i s a n i r l 3 1 0 3 l l o t c o d e 1 7 8 9 a s s e m b l y p a r t n u m b e r d a t e c o d e w e e k 1 9 l i n e c l o t c o d e y e a r 7 = 1 9 9 7 a s s e m b l e d o n w w 1 9 , 1 9 9 7 i n t h e a s s e m b l y l i n e " c " l o g o r e c t i f i e r i n t e r n a t i o n a l igbt 1 - gate 2 - collector 3 - emitter www.irf.com 11 irf644npbf/644nspbf/644nlpbf data and specifications subject to change without notice. this product has been designed and qualified for the (irf644npbf) automotive [q101] & (irf644ns/l) industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/03 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l = 5.0h r g = 25 ? , i as = 8.4a. (see figure 12) i sd 8.4a . di/d 378a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . this is only applied to to-220ab package. **when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint & soldering techniques refer to application note #an-994. 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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